Paper Title:
Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers
  Abstract

The determination of dislocation density and in particular the dislocation distribution in SiC wafers is of particular interest for SiC crystal growth development and production. We present an image recognition tool allowing the wafer analysis with specific needs for SiC. In the first stage of expansion, micropipes are selected and counted from SiC wafers that have been etched by KOH.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
277-281
DOI
10.4028/www.scientific.net/MSF.679-680.277
Citation
H. Karpinski, S. A. Sakwe, M. Fried, E. Bänsch, P. J. Wellmann, "Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers", Materials Science Forum, Vols. 679-680, pp. 277-281, 2011
Online since
March 2011
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$32.00
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