Paper Title:
Etch Pits on 4H-SiC Surface Produced by ClF3 Gas
  Abstract

Selective etching on the surface of single-crystalline 4H-SiC was performed using ClF3 gas at 700 K and at atmospheric pressure in a cold wall reactor. The etch pits at the Si-face and C-face 4H-SiC surface may have relationship with the threading edge and screw dislocation.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
286-289
DOI
10.4028/www.scientific.net/MSF.679-680.286
Citation
H. Habuka, K. Furukawa, K. Tanaka, Y. Katsumi, S. Iizuka, K. Fukae, T. Kato, "Etch Pits on 4H-SiC Surface Produced by ClF3 Gas", Materials Science Forum, Vols. 679-680, pp. 286-289, 2011
Online since
March 2011
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