Paper Title:
Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive
  Abstract

We have proposed a new wet etching recipe using molten KOH and Na2O2 as the etchant (“KN etching”) for dislocation revelation in highly doped n-type 4H-SiC (n+-4H-SiC). Threading screw dislocations (TSDs) and threading edge dislocations (TEDs) have been clearly revealed as hexagonal etch pits differing in pit sizes, and basal plane dislocations (BPDs) as seashell-shaped pits. This new etching recipe has provided a solution to the problem that conventional KOH etching is not effective for dislocation identification in 4H-SiC if the electron concentration is high (>mid-1018 cm-3). We have investigated the effect of SiC off-cut angle on KN etching and it has been shown that the “KN etching” is applicable for the n+-SiC substrate with off-angle from 0o to 8o.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
290-293
DOI
10.4028/www.scientific.net/MSF.679-680.290
Citation
Y. Z. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai, N. Shibata, "Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive", Materials Science Forum, Vols. 679-680, pp. 290-293, 2011
Online since
March 2011
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