Paper Title:
Enlargement Growth of Large 4H-SiC Bulk Single Crystal
  Abstract

In this study, we suggest the effective enlargement method of (0001) 4H-SiC bulk crystals grown by the sublimation method using long length growth technique (LLG). This method could achieve low thermal strain and rapid enlargement growth comparing with conventional c-axis growth technique. We also demonstrated high quality enlargement growth from 2inch to  4inch of (0001) 4H-SiC by LLG.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
3-7
DOI
10.4028/www.scientific.net/MSF.679-680.3
Citation
T. Kato, T. Miura, I. Nagai, H. Taniguchi, H. Kawashima, T. Ozawa, K. Arai, H. Okumura, "Enlargement Growth of Large 4H-SiC Bulk Single Crystal", Materials Science Forum, Vols. 679-680, pp. 3-7, 2011
Online since
March 2011
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$32.00
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