Paper Title:
Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers
  Abstract

Dislocations in 4H-SiC epilayers were imaged nondestructively by means of micro photoluminescence (-PL) mapping at room temperature. The one-to-one correspondence between the individual dislocations and the -PL mapping contrast has been consistently obtained. By analyzing the reduction of the intensity in the -PL mapping image performed at 390 nm (near band-edge emission), we were able to distinguish threading screw dislocations and threading edge dislocations. Furthermore, the contrast of dislocations in PL-intensity mapping image greatly depends on the carrier lifetimes of the 4H-SiC epilayers. Lifetimes longer than 0.5 s are essential to obtain a discernible contrast for the individual dislocations.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
302-305
DOI
10.4028/www.scientific.net/MSF.679-680.302
Citation
G. Feng, J. Suda, T. Kimoto, "Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers", Materials Science Forum, Vols. 679-680, pp. 302-305, 2011
Online since
March 2011
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