Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing |
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| Journal | Materials Science Forum (Volumes 679 - 680) |
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| Volume | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 306-309 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.306 |
| Citation | Xuan Zhang et al., 2011, Materials Science Forum, 679-680, 306 |
| Online since | March, 2011 |
| Authors | Xuan Zhang, Masahiro Nagano, Hidekazu Tsuchida |
| Keywords | 4H-SiC, Basal Plane Dislocation (BPD), Interfacial Dislocations, Misfit, Thermal Stress |
| Abstract | Interfacial dislocations are frequently observed to form during 4H-SiC epitaxy and thermal annealing. This report attempts to establish the correlation between the distribution of interfacial dislocations and the thermal stress induced by a radial temperature gradient. In addition, it is argued that they are misfit dislocations formed by the interaction between thermal strain and misfit strain. |
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