Paper Title:
Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing
  Abstract

Interfacial dislocations are frequently observed to form during 4H-SiC epitaxy and thermal annealing. This report attempts to establish the correlation between the distribution of interfacial dislocations and the thermal stress induced by a radial temperature gradient. In addition, it is argued that they are misfit dislocations formed by the interaction between thermal strain and misfit strain.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
306-309
DOI
10.4028/www.scientific.net/MSF.679-680.306
Citation
X. Zhang, M. Nagano, H. Tsuchida, "Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing", Materials Science Forum, Vols. 679-680, pp. 306-309, 2011
Online since
March 2011
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