Paper Title:
Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface
  Abstract

The performance of 4H-SiC power MOSFETs is limited by the less than ideal electron inversion-layer mobility due to the poor quality of the SiC-SiO2 interface. This poor interface causes several undesirable behaviors of the electrical performance of SiC MOSFETs, including: (1) strong shifts in the threshold voltage with temperature, (2) low channel mobility and (3) strong sensitivity of the mobility to the channel doping concentration. These features are explained by a high density of interface states, the high surface electric field induced in SiC inversion layers, and the combined effectsa combination of Coulomb and surface roughness scattering.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
318-325
DOI
10.4028/www.scientific.net/MSF.679-680.318
Citation
K. Matocha, V. Tilak, "Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface", Materials Science Forum, Vols. 679-680, pp. 318-325, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xiao Yan Xiong, Miao Zhang, Xiao Ping Li, Shao Juan Yu
Abstract:Based on chaotic characteristics in vertical direction of vibrating screen sides, nonlinear methods were proposed to diagnose crack of...
1258
Authors: Ying Lin Li, Li Hui Cao, Lian He Yang
Abstract:Weft knitted pattern design is one of the most important compositions of textile CAD. Traditional pattern design has a higher request on...
576
Authors: Yong Hua Zhang, Jian Hui He, Guo Qing Zhang
Abstract:This paper aims to understand influence of the obliquity of fin ray on its motion performance. An environment-friendly propulsion system...
267
Authors: Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S. Løvlie, Bengt G. Svensson
Abstract:The effect of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface on the capacitance of the MOS capacitors is...
326
Authors: Yi Mei, Fang Ping Wang, Qiao Ying Liu, Yu Tao Mao
Abstract:To solve the thermal deformation caused by thermal load of heavy machinery gearbox, it is established that coupled analysis model to carry...
651