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Effect of Low Frequency Magnetic Field on SiC Solution Growth

Journal Materials Science Forum (Volumes 679 - 680)
Volume Silicon Carbide and Related Materials 2010
Edited by Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages 32-35
DOI 10.4028/www.scientific.net/MSF.679-680.32
Citation Frédéric Mercier et al., 2011, Materials Science Forum, 679-680, 32
Online since March, 2011
Authors Frédéric Mercier, Shinichi Nishizawa
Keywords Bulk, Fluid Dynamic, Matter Transport, Modeling, Solution Growth
Abstract

We investigated numerically fluid dynamics and carbon transport in a 2 inches SiC solution growth with the presence of alternative magnetic fields. Buoyancy and Marangoni convection are taken into account. Our numerical results revealed that the magnetic field parameters have a strong impact on the melt convection. We also propose a solution to increase the mass transfer at the crystal growth front.

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