Paper Title:
Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
  Abstract

We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that both alkali metals enhance the oxidation rate of SiC and strongly influence the energy distribution of interface states.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
334-337
DOI
10.4028/www.scientific.net/MSF.679-680.334
Citation
P. G. Hermannsson, E. Ö. Sveinbjörnsson, "Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium", Materials Science Forum, Vols. 679-680, pp. 334-337, 2011
Online since
March 2011
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