Paper Title:
Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface
  Abstract

We report on electrical and physical investigations aimed to clarify the mechanisms behind the high channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors processed with POCl3 annealing. By low-temperature capacitance–voltage analysis, we found that the shallow interface traps are effectively removed by P incorporation. Using x-ray photoelectron spectroscopy, we found that the three-fold coordinated P atoms exist at the oxide/4H-SiC interface. The overall results suggest that P atoms directly remove the Si–Si bonds and thus eliminate the near-interface traps.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
338-341
DOI
10.4028/www.scientific.net/MSF.679-680.338
Citation
D. Okamoto, H. Yano, S. Kotake, T. Hatayama, T. Fuyuki, "Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface", Materials Science Forum, Vols. 679-680, pp. 338-341, 2011
Online since
March 2011
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Price
$32.00
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