Paper Title:
Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates
  Abstract

Surface and interface morphology of thermal oxides grown on 4-off (0001) oriented 4H-SiC substrates by dry O2 oxidation was investigated using atomic force microscopy (AFM) and transmission electron microscopy (TEM). When step bunching was present on a starting wafer, oxide surface roughness was much larger than that of the starting 4H-SiC surface. This is attributed to the difference in oxidation rate between the terrace and the step face. A step-terrace structure on 4H-SiC(0001) was mostly preserved on the oxide surface, but pronounced oxidation occurred around the step bunching. Cross-sectional TEM observation showed that the SiO2/4H-SiC interface became smoother than the initial surface and the thickness of the SiO2 layer fluctuated. Such SiO2 thickness fluctuation may cause a local electric field concentration when a voltage was applied to the oxide, thus degrading the dielectric breakdown characteristics of 4H-SiC metal-oxide-semiconductor (MOS) devices.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
342-345
DOI
10.4028/www.scientific.net/MSF.679-680.342
Citation
T. Hosoi, K. Konzono, Y. Uenishi, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe, "Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates", Materials Science Forum, Vols. 679-680, pp. 342-345, 2011
Online since
March 2011
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$32.00
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