Paper Title:
Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States
  Abstract

Comparative studies of gate oxides on a N+ pre-implanted area (Ninterface ~1x1019cm-3) and on a virgin Si face 4H-SiC material (Ninterface ~1x1016cm-3) have been undertaken by means of Capacitance-Voltage (C-V) characteristics, performed at different temperatures and frequencies, and Thermal Dielectric Relaxation Current technique. In the non implanted samples, the stretch out of the C-V curves get larger as the temperature is lowered to 150K, while for lower temperatures the C-V characteristics become steeper and some discontinuities occur. These discontinuities are specific for the non-implanted sample and are associated with charging of the fast near interface states (NIToxfast) via a tunneling from the shallow interface states (Dit). The tunneling from the shallow Dit to NIToxfast supress the a.c. response of Dit, which is recovered only after most of the NIToxfast are charged with electrons.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
346-349
DOI
10.4028/www.scientific.net/MSF.679-680.346
Citation
I. Pintilie, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, L. S. Løvlie, B. G. Svensson, "Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States", Materials Science Forum, Vols. 679-680, pp. 346-349, 2011
Online since
March 2011
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