Paper Title:

Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance

Periodical Materials Science Forum (Volumes 679 - 680)
Main Theme Silicon Carbide and Related Materials 2010
Edited by Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages 350-353
DOI 10.4028/www.scientific.net/MSF.679-680.350
Citation Ming Hung Weng et al., 2011, Materials Science Forum, 679-680, 350
Online since March, 2011
Authors Ming Hung Weng, Simon Barker, Rajat Mahapatra, Benjamin J.D. Furnival, Nicolas G. Wright, Alton B. Horsfall
Keywords High-K Dielectric, Interface State Density (Dit), Interface Trap, Ledge, MISiC
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We have investigated the annealing of fixed oxide charge and interfacial traps in MISiC strucures by means of the photo capacitance voltage technique at temperatures up to 500°C. Elevated temperature measurements show reduced hysteresis and reduced fixed oxide charge at the interface. The photo capacitance technique shows a real-time measurement at elevated temperatures, in which electrons are populated by photo energy, in a 4H-SiC MIS structure. We also confirm the reduction of fixed oxide charge at the interface by means of high temperature post deposition annealing, which occurs during the high temperature measurements.

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