Paper Title:
Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
  Abstract

The gate oxide reliability and channel mobility of carbon face (000-1) 4H Silicon Carbide (SiC) MOSFETs are investigated. Several gate oxidation processes including dry oxygen, pyrogenic steam, and nitrided oxides were investigated utilizing MOS capacitors for time dependent dielectric breakdown (TDDB), dielectric field strength, and MOSFETs for inversion layer mobility measurements. The results show the C-face can achieve reliability similar to the Si-face, however this is highly dependent on the gate oxide process. The reliability is inversely related to the field effect mobility where other research groups report that pyrogenic steam yields the highest electron mobility while this work shows it has weakest oxide in terms of dielectric strength and shortest time to failure.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
354-357
DOI
10.4028/www.scientific.net/MSF.679-680.354
Citation
J. Fronheiser, A. Chatterjee, U. Grossner, K. Matocha, V. Tilak, L. C. Yu, "Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability", Materials Science Forum, Vols. 679-680, pp. 354-357, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Mitsuo Okamoto, Seiji Suzuki, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda
Abstract:We have fabricated lateral RESURF MOSFETs on 4H-SiC(0001) Si-face and (000-1) C-face substrates, and compared those properties. The channel...
805
Authors: Koji Nakayama, Yoshitaka Sugawara, R. Ishii, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura
Abstract:Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC...
1359
Authors: Akimasa Kinoshita, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC...
893
Authors: Yong Zhao Yao, Yukari Ishikawa, Koji Sato, Yoshihiro Sugawara, Katsunori Danno, Hiroshi Suzuki, Takeshi Bessho
Chapter 9: Processing Diverse
Abstract:To solve the problem that no preferential chemical etching is available for dislocation revelation from the carbon-face (C-face) of 4H-SiC, a...
829