Paper Title:
On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
  Abstract

Using several types of surface analysis (Optical profilometers (OP), Atomic Force Microscopies (AFM), Scanning Electron Microscopies (SEM) and cross-sectional high-resolution Transmission Electron Microscopies (TEM)) we analyze the surface morphologies of misoriented 4H silicon carbide after pre-growth hydrogen etching and homo-epitaxial growths. We observed the characteristic self-ordering of nano-facets on any analyzed surface. This nano-faceting, which should not be confused with step bunching, can be considered as a close-to-equilibrium instability, for this reason can be hindered.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
358-361
DOI
10.4028/www.scientific.net/MSF.679-680.358
Citation
M. Camarda, A. Severino, P. Fiorenza, V. Raineri, S. Scalese, C. Bongiorno, A. La Magna, F. La Via, M. Mauceri, D. Crippa, "On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide", Materials Science Forum, Vols. 679-680, pp. 358-361, 2011
Online since
March 2011
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