Paper Title:
Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
  Abstract

We present an electrically detected electron-spin-resonance (ESR) study on SiO2-SiC interface regions of n-channel lateral 4H-SiC MOSFETs with hydrogen annealing. This characterization technique can reveal electrically active defects that interact with channel currents of the MOSFETs. The defects were observed at 20 K, and were labeled “PH0” and “PH1”, one of which (PH1) exhibited a 1H hyperfine splitting of 5.3 mT.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
370-373
DOI
10.4028/www.scientific.net/MSF.679-680.370
Citation
T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, N. Morishita, T. Ohshima, J. Isoya, "Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor", Materials Science Forum, Vols. 679-680, pp. 370-373, 2011
Online since
March 2011
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