Paper Title:
Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement
  Abstract

Surface properties of the 4H-SiC (0001) Si faces could be evaluated by the contact angle measurements with water droplet method, X-ray photoelectron spectroscopy and an atomic force microscope. The contact angles do not depend on the surface roughness under 3nm. The substrate surfaces with the contact angles over 30o will be terminated by hydrogen related species. The contact angles around 20o on 4H-SiC is caused by the removal of oxide layer with fluoride acid and terminated subsequently by the -CF species on the surface. The hydrophile surface of 4H-SiC is caused by the formation of chemical oxide layer as well as the case of the silicon wafers.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
374-377
DOI
10.4028/www.scientific.net/MSF.679-680.374
Citation
T. Hatayama, H. Suzuki, H. Koketsu, H. Yano, T. Fuyuki, "Surface Treatments of 4H-SiC Evaluated by Contact Angle Measurement", Materials Science Forum, Vols. 679-680, pp. 374-377, 2011
Online since
March 2011
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$32.00
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