Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO2/SiC Interface on F-N Current Degradation |
|
| Journal | Materials Science Forum (Volumes 679 - 680) |
|---|---|
| Volume | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 382-385 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.382 |
| Citation | Christian Strenger et al., 2011, Materials Science Forum, 679-680, 382 |
| Online since | March, 2011 |
| Authors | Christian Strenger, Anton J. Bauer, Heiner Ryssel |
| Keywords | Charge, FN, Fowler-Nordheim, Interface, N2O, Nitrogen, Oxide, Silicon Carbide (SiC), SiO2 |
| Abstract | Metal-oxide-semiconductor (MOS) capacitors were formed on 4H-silicon carbide (SiC) using thermally grown silicon dioxide (SiO2) as gate dielectrics, both with and without nitrogen incorporation within the oxide. The field dependence of the charge trapping properties of these structures was analyzed and linked to the observed Fowler-Nordheim current degradation. Furthermore, first considerations were presented that indicate an electron impact emission induced generation of positive oxide trapped charge. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
