Paper Title:
Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO2/SiC Interface on F-N Current Degradation
  Abstract

Metal-oxide-semiconductor (MOS) capacitors were formed on 4H-silicon carbide (SiC) using thermally grown silicon dioxide (SiO2) as gate dielectrics, both with and without nitrogen incorporation within the oxide. The field dependence of the charge trapping properties of these structures was analyzed and linked to the observed Fowler-Nordheim current degradation. Furthermore, first considerations were presented that indicate an electron impact emission induced generation of positive oxide trapped charge.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
382-385
DOI
10.4028/www.scientific.net/MSF.679-680.382
Citation
C. Strenger, A. J. Bauer, H. Ryssel, "Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO2/SiC Interface on F-N Current Degradation", Materials Science Forum, Vols. 679-680, pp. 382-385, 2011
Online since
March 2011
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