Paper Title:
Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer
  Abstract

The energy band structure of SiO2/4H-SiC fabricated on (0001) Si- and (000-1) C-face substrates was investigated by means of synchrotron radiation x-ray photoelectron spectroscopy (SR-XPS). The band structure was found to be dependent on substrate orientation and oxide thickness due to both intrinsic and extrinsic effects that cause charge transfer at the SiO2/SiC interface. Our SR-XPS analysis revealed that the intrinsic conduction band offset of the SiO2/SiC for the C-face substrate is smaller than that for the Si-face. This means that, whereas C-face substrates exhibit high carrier mobility, a problem that is crucial to gate oxide reliability remains for SiC-based metal-oxide-semiconductor (MOS) devices owing to increased leakage current.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
386-389
DOI
10.4028/www.scientific.net/MSF.679-680.386
Citation
H. Watanabe, T. Kirino, Y. Kagei, J. Harries, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, "Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer", Materials Science Forum, Vols. 679-680, pp. 386-389, 2011
Online since
March 2011
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