Paper Title:
The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method
  Abstract

Extensive study of various process parameters to influence on the growth of 4H-SiC crystal has been carried out using the transformation of the 6H-SiC seed by a PVT method. The axial temperature gradients were increased throughout increasing the crucible length along growth direction in order to enhance the growth rate and transformed crystal yield. The N2/Ar gas ratio used during the crystal growth related with carrier concentration/mobility of grown crystal. In the initial stage of growth, foreign polytypes such as 6H/15R were observed on 6H-SiC seed crystal but 4H crystals were entirely grown after the process optimization. While the typical absorption spectrum of SiC seed crystal indicated that the SiC polytype was the 6H-SiC with fundamental absorption energy of about 3.02eV, absorption spectrum of grown SiC crystal exhibited 4H-SiC with fundamental absorption energy of about 3.26eV. The entirely transformed SiC region exhibited lower micropipe density than 6H/4H transition region.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
40-43
DOI
10.4028/www.scientific.net/MSF.679-680.40
Citation
I. G. Yeo, T. W. Lee, J. H. Park, W. S. Yang, H. B. Ryu, M. S. Park, I. S. Kim, B. C. Shin, W. J. Lee, T. H. Eun, S. S. Lee, M. C. Chun, "The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method", Materials Science Forum, Vols. 679-680, pp. 40-43, 2011
Online since
March 2011
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