Paper Title:
Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC
  Abstract

A two-dimensional model of aluminum-ion implantation into 4H-SiC at moderate doses (1011 to 1013 cm-2) has been developed. The model is based on a Monte-Carlo simulation using a binary-collision approximation. This simulation reveals that iso-concentration contours are independent of the orientation of the masking edge. Lateral range straggling is extracted by expressing the lateral-concentration profiles as a one-dimensional dual-Pearson-distribution function multiplied by a Gauss-distribution function. Compared to vertical straggling, the lateral straggling is found to be more weakly dependent on projected range.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
405-408
DOI
10.4028/www.scientific.net/MSF.679-680.405
Citation
K. Mochizuki, N. Yokoyama, "Two-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 405-408, 2011
Online since
March 2011
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Price
$32.00
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