Paper Title:
DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions
  Abstract

In the present paper, 4H-SiC JBS diodes with "boron" p–n junctions have been investigated by means of deep-level transient spectroscopy (DLTS). The sign of the DLTS signal for all the 4H-SiC diodes under study, was positive. The "anomaly" of the DLTS spectra measured is apparently connected with the properties of "boron" p–n junctions. In particular, is presented the role of deep D-centers in recompensation of donors in the JBS diodes.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
409-412
DOI
10.4028/www.scientific.net/MSF.679-680.409
Citation
P. A. Ivanov, O. Korolkov, T.'yana P. Samsonova, N. Sleptsuk, A. S. Potapov, J. Toompuu, T. Rang, "DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions", Materials Science Forum, Vols. 679-680, pp. 409-412, 2011
Online since
March 2011
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