Paper Title:
Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC
  Abstract

This paper reports on the impact of the surface morphology on the properties of Ti/Al Ohmic contacts fabricated on Al-implanted 4H-SiC. In particular, the surface roughness of the Al-implanted regions after annealing at 1700 °C was strongly reduced by the using a protective carbon capping layer during annealing (the surface roughness decreased from 9.0 nm to 1.3 nm). In this way, also the morphology and the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions could be improved. The electrical and morphological data were correlated with the structural properties of the reacted metal layer and of the metal/SiC interfacial region.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
413-416
DOI
10.4028/www.scientific.net/MSF.679-680.413
Citation
A. Frazzetto, F. Roccaforte, F. Giannazzo, R. Lo Nigro, C. Bongiorno, S. Di Franco, M. H. Weng, M. Saggio, E. Zanetti, V. Raineri, "Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 413-416, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Lilyana Kolaklieva, Roumen Kakanakov, Iva Avramova, Ts. Marinova
Abstract:Electrical, morphological and chemical properties of nanolayered Au/Ti/Al ohmic contacts with different Ti:Al ratio are investigated....
725
Authors: Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Giuseppe Moschetti, Vito Raineri, Jean Lorenzzi, Gabriel Ferro
Abstract:This paper reports on the macro- and nanoscale electro-structural evolution, as a function of annealing temperature, of nickel-silicide Ohmic...
569
Authors: Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Giuseppe Moschetti, Corrado Bongiorno, Salvatore Di Franco, Valeria Puglisi, Giuseppe Abbondanza, Vito Raineri
Abstract:Gallium nitride (GaN) and related alloys (AlxGa1-xN) are promising semiconductors for high-frequency and high-power devices applications. In...
967
Authors: Fabrizio Roccaforte, Alessia Frazzetto, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Michał Leszczyński, Pawel Prystawko, Edoardo Zanetti, Mario Saggio, Vito Raineri
Chapter 5: GaN: Devices and Material
Abstract:The formation of good Ohmic contacts to p-type silicon carbide (SiC) and gallium nitride (GaN) is an important physical and technological...
203
Authors: Stanislav Cichoň, Petr Macháč, Jiří Vojtík
Chapter 9: Processing Diverse
Abstract:A method for formation of enhanced ohmic contacts on SiC for operation under adverse conditions has been studied. Ni, NiSi2 and Si ohmic...
797