Paper Title:
2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions
  Abstract

In this work under-mask penetration of Al+ ions implanted in 4H-SiC is investigated by computer simulation based on the Monte-Carlo binary collision approximation (MC–BCA). Results indicate that a small fraction of ions, implanted normal to a (0001) 4H-SiC wafer (8° off-axis towards the {11-20}), is scattered and become channeled in the <1120> directions perpendicular to the <0001> axis. Due to this phenomenon, doped regions with concentration ≤ 10− 4 of the peak value, may extend laterally for a few µm below the edge of a SiO2 mask.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
421-424
DOI
10.4028/www.scientific.net/MSF.679-680.421
Citation
G. Lulli, R. Nipoti, "2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions", Materials Science Forum, Vols. 679-680, pp. 421-424, 2011
Online since
March 2011
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Price
$32.00
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