Paper Title:
Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing
  Abstract

Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) were fabricated on C-face 4H-SiC with post-oxidation annealing in phosphorus- containing atmosphere. POCl3/N2 annealing at 1000 °C, which is an effective condition for Si-face, did not bring any improvement in the interface state density (Dit) for C-face due to additional oxide growth. We have developed a new process sequence suitable for C-face MOS structures. As a result, the Dit near the conduction band edge was drastically decreased by the developed process to less than 3x1011 cm−2eV−1. The field-effect mobility of C-face 4H-SiC MOSFETs was effectively increased to 37 cm2/Vs. We found that the incorporation of phosphorus atoms into the SiO2/SiC interface can improve MOSFET performance not only for the Si-face but also for the C-face.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
425-428
DOI
10.4028/www.scientific.net/MSF.679-680.425
Citation
S. Kotake, H. Yano, D. Okamoto, T. Hatayama, T. Fuyuki, "Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing", Materials Science Forum, Vols. 679-680, pp. 425-428, 2011
Online since
March 2011
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