Paper Title:
Theoretical Studies for Si and C Emission into SiC Layer during Oxidation
  Abstract

To understand the structure of SiC–oxide interface more in detail, we propose a profiling theory of Si and C emission into SiC layer during oxidation. Simulations of the depth profiles of Si and C interstitials results in the structures analogous with those observed from a spectroscopic ellipsometry. To determine the diffusivities of Si and C interstitials, we performed capacitance–voltage measurements for examining the re-distribution profiles of nitrogen after oxidation and compared between observed and calculated profile. The calculated nitrogen profiles showed good fits to the observed ones in the case of self-diffusivity of C interstitials magnified by several 10 times for literature value. Finally, we discuss the validity of the proposed theory.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
429-432
DOI
10.4028/www.scientific.net/MSF.679-680.429
Citation
Y. Hijikata, H. Yaguchi, S. Yoshida, "Theoretical Studies for Si and C Emission into SiC Layer during Oxidation", Materials Science Forum, Vols. 679-680, pp. 429-432, 2011
Online since
March 2011
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