Paper Title:
Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum
  Abstract

Influence of high-vacuum annealing at temperatures in the range 1300-1400°C and residual pressure of ~10-6 Torr on the surface of 6H-SiC (0001) wafers has been studied. Auger spectroscopy and RHEED data show that the annealing conditions do not lead to any surface reconstruction of the wafers. Atomic force microscopy reveals atomically flat surface terraces separated by steps of unit-cell height (h = 1.5 nm).

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
437-440
DOI
10.4028/www.scientific.net/MSF.679-680.437
Citation
S. P. Lebedev, V.N. Petrov, I.S. Kotousova, A.A. Lavrent’ev, P.A. Dement’ev, A. A. Lebedev, A. N. Titkov, "Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum", Materials Science Forum, Vols. 679-680, pp. 437-440, 2011
Online since
March 2011
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