Paper Title:
Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
  Abstract

Post-oxidation annealing (POA) in Ar at high temperature has been performed during fabrication of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). The gate oxides were formed by thermal oxidation followed by N2O annealing, then annealed in Ar for 30 min or 5 h at 1300 °C. The results of Secondary Ion Mass Spectrometry (SIMS) measurements indicated that the C atoms accumulated at the SiO2/SiC interface by thermal oxidation diffused during the 5h-Ar annealing. The characteristics of n-channel MOSFETs were improved and the peak value of field effect mobility was increased to 33 cm2/Vs from 19 cm2/Vs by extending the Ar annealing time.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
445-448
DOI
10.4028/www.scientific.net/MSF.679-680.445
Citation
M. Kato, Y. Nanen, J. Suda, T. Kimoto, "Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature", Materials Science Forum, Vols. 679-680, pp. 445-448, 2011
Online since
March 2011
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