Paper Title:
Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications
  Abstract

We investigated the performance of different metallization/passivation systems for high temperature applications. The metallizations comprised a 150 nm sputtered Pt or a 150 nm e-beam evaporated PtRh layer on Ti/TiN underlayers, respectively. The passivation coatings consisted of amorphous PECVD SiOx, of amorphous stress-reduced PECVD SiNy, and of a SiOx/ SiNy stack. For samples with SiOx and SiOx/ SiNy passivation layers the electrical properties changed after a short high temperature anneal at 600 °C but then remained stable during further annealing. This was attributed to the formation of PtTi alloys, which stabilized the metallization stack. In samples with SiNy passivation a significant Pt out-diffusion into the passivation layer was observed. This led to a degradation of the electrical and mechanical properties. The best performance was achieved with Pt-based metallizations and SiOx or SiOx/SiNy passivations.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
449-452
DOI
10.4028/www.scientific.net/MSF.679-680.449
Citation
W. Daves, A. Krauss, M. Le-Huu, S. Kronmüller, V. Häublein, A. J. Bauer, L. Frey, "Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications", Materials Science Forum, Vols. 679-680, pp. 449-452, 2011
Online since
March 2011
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