Paper Title:
Graded Etched Junction Termination for SiC Thyristors
  Abstract

In this paper, we propose a graded etched junction termination extension for SiC thyristors. It has the functionality of a multiple implanted JTE, but is realized by purely etched means. This termination is demonstrated up to 4 kV on a sample with a drift layer thickness of 35 µm. On another sample with a thinner drift layer, similar thyristors have been realized with a low resistive contact, resulting in an on-state voltage drop of 3.2 V at 40 A/cm².

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
457-460
DOI
10.4028/www.scientific.net/MSF.679-680.457
Citation
G. Pâques, N. Dheilly, D. Planson, R. W. De Doncker, S. Scharnholz, "Graded Etched Junction Termination for SiC Thyristors", Materials Science Forum, Vols. 679-680, pp. 457-460, 2011
Online since
March 2011
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