Paper Title:
Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC
  Abstract

Anodic oxidation was performed to 4H-SiC in order to suppress the negative impacts on the Schottky diode characteristics. The electrochemical deposition of ZnO before and after the oxidation revealed a reduction in the number of areas with low Schottky barrier height. Before and after the oxidation, current-voltage characteristics of Ni Schottky contacts was compared, and it was found out that the characteristics were improved after the oxidation. These results suggest that the anodic oxidation is a promising technique to suppress the negative influence of the crystal defects.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
461-464
DOI
10.4028/www.scientific.net/MSF.679-680.461
Citation
M. Kimura, M. Kato, M. Ichimura, "Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 461-464, 2011
Online since
March 2011
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Price
$32.00
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