Paper Title:
Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing
  Abstract

In this paper we demonstrate the recovery of Ohmic contacts formed on C-face 4H-SiC following high temperature post-processing. After a typical high-κ dielectric anneal in O2 for 3 minutes at 650 °C, replacing the metallization stack is revealed to significantly reduce the damage produced in the I-V characteristics. Using C-AFM we have also studied the mechanisms responsible for Ohmic contact formation, presenting a possible relationship between changes in the SiC crystal orientation and the establishment of Ohmic behaviour.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
469-472
DOI
10.4028/www.scientific.net/MSF.679-680.469
Citation
B. J.D. Furnival, K. Vassilevski, N. G. Wright, A. B. Horsfall, "Recovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-Processing", Materials Science Forum, Vols. 679-680, pp. 469-472, 2011
Online since
March 2011
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Price
$32.00
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