Paper Title:
Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height
  Abstract

With the aim of investigating the specific process parameters of bipolar semiconductor devices, simple mesa-terminated silicon carbide PiN diodes were designed and fabricated. The expected effect of the mesa height on the reverse behaviour could be investigated as well as the condition of the material surface. It was shown that these simple devices are well suited as test devices.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
473-476
DOI
10.4028/www.scientific.net/MSF.679-680.473
Citation
G. Pâques, S. Scharnholz, J. P. Konrath, N. Dheilly, D. Planson, R. W. De Doncker, "Investigation of Epitaxial SiC PiN Diodes with Variable Mesa Height", Materials Science Forum, Vols. 679-680, pp. 473-476, 2011
Online since
March 2011
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Price
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