Paper Title:
Thinning of 2-Inch SiC Wafer by Plasma Chemical Vaporization Machining Using Cylindrical Rotary Electrode
  Abstract

To reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult to thin a SiC wafer with a high removal rate by conventional mechanical machining because its high hardness and brittleness cause cracking and chipping during thinning. In this study, we attempted to thin a 2-inch 4H-SiC wafer by plasma chemical vaporization machining (PCVM), which is plasma etching using atmospheric-pressure plasma. By controlling the scanning speed of the table and optimizing the oxygen percentage in the CF4+O2+He mixture gas, a maximum removal rate of 0.56 μm/min was obtained over the entire wafer. Furthermore, the surface roughness was improved after thinning. Therefore, PCVM can be used as an effective method for thinning SiC wafers.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
481-484
DOI
10.4028/www.scientific.net/MSF.679-680.481
Citation
Y. Sano, T. Kato, K. Aida, K. Yamamura, H. Mimura, S. Matsuyama, K. Yamauchi, "Thinning of 2-Inch SiC Wafer by Plasma Chemical Vaporization Machining Using Cylindrical Rotary Electrode", Materials Science Forum, Vols. 679-680, pp. 481-484, 2011
Online since
March 2011
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Price
$32.00
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