Paper Title:
Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching
  Abstract

Catalyst-referred etching (CARE) is an abrasive-free planarization method. We used 3-inch and 2-inch 4H-SiC (0001) 4° off-axis substrates to investigate the processing characteristics that are affected by the substrate diameter. The surface roughness of the 3-inch substrate was extremely smooth over the whole substrate. The surface roughness and removal rate of the 3-inch substrate were approximately the same as those of the 2-inch substrate.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
493-495
DOI
10.4028/www.scientific.net/MSF.679-680.493
Citation
T. Okamoto, Y. Sano, K. Tachibana, K. Arima, A. N. Hattori, K. Yagi, J. Murata, S. Sadakuni, K. Yamauchi, "Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching", Materials Science Forum, Vols. 679-680, pp. 493-495, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xiao Yan Xiong, Miao Zhang, Xiao Ping Li, Shao Juan Yu
Abstract:Based on chaotic characteristics in vertical direction of vibrating screen sides, nonlinear methods were proposed to diagnose crack of...
1258
Authors: Ying Lin Li, Li Hui Cao, Lian He Yang
Abstract:Weft knitted pattern design is one of the most important compositions of textile CAD. Traditional pattern design has a higher request on...
576
Authors: Yong Hua Zhang, Jian Hui He, Guo Qing Zhang
Abstract:This paper aims to understand influence of the obliquity of fin ray on its motion performance. An environment-friendly propulsion system...
267
Authors: Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S. Løvlie, Bengt G. Svensson
Abstract:The effect of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface on the capacitance of the MOS capacitors is...
326
Authors: Yi Mei, Fang Ping Wang, Qiao Ying Liu, Yu Tao Mao
Abstract:To solve the thermal deformation caused by thermal load of heavy machinery gearbox, it is established that coupled analysis model to carry...
651