Paper Title:
Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication
  Abstract

Rapid Thermal Processing (RTP) has been evaluated as an alternative to the conventional furnace process for the gate oxide formation of SiC lateral MOSFETs. We show that this innovative oxidation method has not only the advantage to significantly reduce the thermal budget compared to classical oxidation, but also produces a significant improvement of MOSFET performance when using N2O as oxidizing gas. Studying different surface preparation before gate oxidation, we demonstrate that in-situ surface preparation by H2 annealing increases considerably the channel mobility and also the electrical stability with respect to constant bias stress at low-field.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
500-503
DOI
10.4028/www.scientific.net/MSF.679-680.500
Citation
A. Constant, N. Camara, J. Montserrat, E. Pausas, J. Camassel, P. Godignon, "Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication", Materials Science Forum, Vols. 679-680, pp. 500-503, 2011
Online since
March 2011
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$32.00
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