Paper Title:
Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC
  Abstract

In this study a pyrolyzed photoresist film that has been used for protecting the implanted surface of a 4H-SiC wafer during post implantation annealing at 1800-1950 °C has preserved on the wafer surface and used for the fabrication of ohmic contact pads on P+ implanted areas. The carbon film has been patterned by using a RIE O2-based plasma. A specific contact resistance of 9  10 5 cm2 has been obtained on P+ 1  1020 cm 3 implanted 4H-SiC. Micro-Raman characterizations show that the carbon cap is formed of a nano-crystalline graphitic phase.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
504-507
DOI
10.4028/www.scientific.net/MSF.679-680.504
Citation
R. Nipoti, F. Mancarella, F. Moscatelli, R. Rizzoli, S. Zampolli, "Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC", Materials Science Forum, Vols. 679-680, pp. 504-507, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi
Abstract:n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the...
649
Authors: Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi
Abstract:This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature...
811
Authors: Roberta Nipoti, Fabio Bergamini, Francesco Moscatelli, Antonella Poggi, Mariaconcetta Canino, Giuseppe Bertuccio
Abstract:An n-type 8° off-axis <0001> 4H-SiC epitaxial wafer was processed. The n-type epilayer had doping and thickness of, respectively, ~3 × 1015...
815