Paper Title:
β-SiC NWs Grown on Patterned and MEMS Silicon Substrates
  Abstract

Cubic silicon carbide nanowires (-SiC or 3C-SiC NW) have been grown by Vapour Phase Epitaxy on (001) silicon substrates patterned by conventional photolithography and on Micro Electro Mechanical Systems (MEMS, e.g. cantilevers, springs, bridges) fabricated on (001) Silicon On Insulator (SOI) wafers. The NW morphology was investigated by scanning electron microscopy, showing that the nanowires grew selectively where a nickel thin layer was previously deposited, thanks to its catalytic action. High resolution transmission electron microscopy studies showed that the NWs are predominantly 3C polytype with <111> growth axis and stacking defects on (111) planes.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
508-511
DOI
10.4028/www.scientific.net/MSF.679-680.508
Citation
B. E. Watts, G. Attolini, F. Rossi, M. Bosi, G. Salviati, F. Mancarella, M. Ferri, A. Roncaglia, A. Poggi, "β-SiC NWs Grown on Patterned and MEMS Silicon Substrates", Materials Science Forum, Vols. 679-680, pp. 508-511, 2011
Online since
March 2011
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Price
$32.00
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