Paper Title:
Growth of SiC Microwires through Si Microwires Carburization
  Abstract

Silicon microwires (MWs) previously synthesized using the VLS method with gold catalyst are being carburized at 1100°C under methane aiming to their conversion to SiC. SEM, TEM as well as XPS and Raman spectroscopy were used for structural and morphological characterization. After carburization achievement, SiC is found to be polycrystalline with a high density of stacking faults associated to an increase of surface roughness. Directions for the carburization process optimization are given.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
512-515
DOI
10.4028/www.scientific.net/MSF.679-680.512
Citation
M. Ollivier, A. Mantoux, E. Bano, K. Rogdakis, K. Zekentes, T. Baron, L. Latu-Romain, "Growth of SiC Microwires through Si Microwires Carburization", Materials Science Forum, Vols. 679-680, pp. 512-515, 2011
Online since
March 2011
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