Paper Title:

Growth of SiC Microwires through Si Microwires Carburization

Periodical Materials Science Forum (Volumes 679 - 680)
Main Theme Silicon Carbide and Related Materials 2010
Edited by Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages 512-515
DOI 10.4028/www.scientific.net/MSF.679-680.512
Citation Maelig Ollivier et al., 2011, Materials Science Forum, 679-680, 512
Online since March, 2011
Authors Maelig Ollivier, Arnaud Mantoux, Edwige Bano, Konstantinos Rogdakis, Konstantinos Zekentes, Thierry Baron, Laurence Latu-Romain
Keywords 3C-SiC, Carburization, Microwire
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Abstract

Silicon microwires (MWs) previously synthesized using the VLS method with gold catalyst are being carburized at 1100°C under methane aiming to their conversion to SiC. SEM, TEM as well as XPS and Raman spectroscopy were used for structural and morphological characterization. After carburization achievement, SiC is found to be polycrystalline with a high density of stacking faults associated to an increase of surface roughness. Directions for the carburization process optimization are given.