Growth of SiC Microwires through Si Microwires Carburization
| Periodical | Materials Science Forum (Volumes 679 - 680) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 512-515 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.512 |
| Citation | Maelig Ollivier et al., 2011, Materials Science Forum, 679-680, 512 |
| Online since | March, 2011 |
| Authors | Maelig Ollivier, Arnaud Mantoux, Edwige Bano, Konstantinos Rogdakis, Konstantinos Zekentes, Thierry Baron, Laurence Latu-Romain |
| Keywords | 3C-SiC, Carburization, Microwire |
| Price | US$ 28,- |
Silicon microwires (MWs) previously synthesized using the VLS method with gold catalyst are being carburized at 1100°C under methane aiming to their conversion to SiC. SEM, TEM as well as XPS and Raman spectroscopy were used for structural and morphological characterization. After carburization achievement, SiC is found to be polycrystalline with a high density of stacking faults associated to an increase of surface roughness. Directions for the carburization process optimization are given.