Paper Title:
Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions
  Abstract

Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus. The epitaxial 3C-SiC thin layer is grown on p-type Si(001) above 1200°C in 2%CH4/98%H2 by plasma-assisted carbonization and the n-type NCD overlayer is subsequently grown at 830°C in 1%CH4/30%N2/69%Ar by plasma-enhanced chemical vapor deposition (CVD). According to cross sectional TEM observations, the initial thickness of the 3C-SiC layer (~20 nm) is reduced to 10 nm or less in the beginning of the NCD growth due most likely to etching. A rectifying current-voltage characteristic is obtained for an n-type NCD/epitaxial 3C-SiC/p-type Si(001) junction in a diode configuration.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
524-527
DOI
10.4028/www.scientific.net/MSF.679-680.524
Citation
M. Goto, A. Koga, K. Yamada, Y. Kato, K. Teii, "Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions", Materials Science Forum, Vols. 679-680, pp. 524-527, 2011
Online since
March 2011
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