Paper Title:
Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode
  Abstract

Forward voltage drops of carbon implanted and thermal oxidized pin diode with thick drift layer are investigated to evaluate the effect on the lifetime. The forward voltage drops of the carbon implanted and thermal oxidized pin diodes with drift layer of 120 μm thick were around 4.0 V. Furthermore, blocking characteristics of 4H-SiC pin diodes with mesa-JTE, which were fabricated on C-face and Si-face substrates, are also investigated. The breakdown voltages of pin diodes with 250 μm and 100 μm epitaxial layers are 17.1 kV and 10.9 kV, respectively.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
535-538
DOI
10.4028/www.scientific.net/MSF.679-680.535
Citation
K. Nakayama, R. Ishii, K. Asano, T. Miyazawa, M. Ito, H. Tsuchida, "Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode", Materials Science Forum, Vols. 679-680, pp. 535-538, 2011
Online since
March 2011
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Price
$32.00
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