Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode |
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| Journal | Materials Science Forum (Volumes 679 - 680) |
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| Volume | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 535-538 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.535 |
| Citation | Koji Nakayama et al., 2011, Materials Science Forum, 679-680, 535 |
| Online since | March, 2011 |
| Authors | Koji Nakayama, Ryosuke Ishii, Katsunori Asano, Tetsuya Miyazawa, Masahiko Ito, Hidekazu Tsuchida |
| Keywords | Carbon Implantation, Multi-Zone JTE, Thermal Oxidation, Ultra-High-Voltage pin Diode |
| Abstract | Forward voltage drops of carbon implanted and thermal oxidized pin diode with thick drift layer are investigated to evaluate the effect on the lifetime. The forward voltage drops of the carbon implanted and thermal oxidized pin diodes with drift layer of 120 μm thick were around 4.0 V. Furthermore, blocking characteristics of 4H-SiC pin diodes with mesa-JTE, which were fabricated on C-face and Si-face substrates, are also investigated. The breakdown voltages of pin diodes with 250 μm and 100 μm epitaxial layers are 17.1 kV and 10.9 kV, respectively. |
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