Paper Title:
Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime
  Abstract

We report on specific features of forward voltage degradation of 4H-SiC p-i-n diodes in the pulse mode. It is shown that pulse stresses with a pulse duration shorter than several milliseconds cause substantially smaller forward voltage drift in comparison with a dc stress with the same charge passed through the diodes and the same distribution of injected carriers. A self-recovery of the forward voltage is observed at room temperature.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
539-542
DOI
10.4028/www.scientific.net/MSF.679-680.539
Citation
M. E. Levinshtein, P. A. Ivanov, J. W. Palmour, A. K. Agarwal, M. K. Das, "Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime", Materials Science Forum, Vols. 679-680, pp. 539-542, 2011
Online since
March 2011
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Price
$32.00
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