Paper Title:
Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors
  Abstract

Detectors capable of withstanding high radiation environments for prolonged periods of exposure are essential for the monitoring of nuclear power stations and nuclear waste as well as for space exploration. Schottky diode X-ray detectors were exposed to high dose proton irradiation (1013 cm-2, 50 MeV) and changes in the detection resolution (spectroscopic full width half-maximum) have been observed. Using Deep Level Transient Spectroscopy (DLTS) and the degradation of the electrical characteristics of the diode, we have shown that radiation induced traps located in the upper half of the bandgap have reduced the concentration of carriers.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
547-550
DOI
10.4028/www.scientific.net/MSF.679-680.547
Citation
R. C. Stevens, K. Vassilevski, J. E. Lees, N. G. Wright, A. B. Horsfall, "Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors", Materials Science Forum, Vols. 679-680, pp. 547-550, 2011
Online since
March 2011
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Price
$32.00
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