Paper Title:
Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method
  Abstract

This paper focuses on UV-photodetector simulation. The calculus method description and the physical equations which occur in this model are presented as well as the UV-photodetector structure (p+n--n+ diode). Based on the Finite Element Method the electrical part solves the continuity and Poisson equation, and the optical part solves by Maxwell’s equation, FDTD [1]. Simulation works point out the influence of the p+-type layer on the electrical characteristics such as the current densities versus reverse bias. Indeed, simulation results show the current density increase with the decrease doping concentration or the p+-type layer thickness.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
563-566
DOI
10.4028/www.scientific.net/MSF.679-680.563
Citation
S. Biondo, W. Vervisch, L. Ottaviani, O. Palais, "Optical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element Method", Materials Science Forum, Vols. 679-680, pp. 563-566, 2011
Online since
March 2011
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