Paper Title:
Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection
  Abstract

Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
567-570
DOI
10.4028/www.scientific.net/MSF.679-680.567
Citation
D. M. Nguyen, G. Pâques, N. Dheilly, C. Raynaud, D. Tournier, J. P. Konrath, S. Scharnholz, D. Planson, "Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection", Materials Science Forum, Vols. 679-680, pp. 567-570, 2011
Online since
March 2011
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