Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes |
|
| Journal | Materials Science Forum (Volumes 679 - 680) |
|---|---|
| Volume | Silicon Carbide and Related Materials 2010 |
| Edited by | Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson |
| Pages | 571-574 |
| DOI | 10.4028/www.scientific.net/MSF.679-680.571 |
| Citation | Bernd Zippelius et al., 2011, Materials Science Forum, 679-680, 571 |
| Online since | March, 2011 |
| Authors | Bernd Zippelius, Michael Krieger, Heiko B. Weber, Gerhard Pensl, Hiroyuki Nagasawa, Takamitsu Kawahara, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi |
| Keywords | Leakage Current, p+n Diodes, Thermal Barrier Height, Thermally-Assisted Tunneling |
| Abstract | The dependence of the reverse current of 3C-SiC p+-n diodes on the temperature and on the reverse bias is measured and a model based on thermally-assisted tunneling is proposed to explain the dominating mechanism responsible for the leakage current. Taking into account an additional ohmic shunt resistance, the experimental reverse characteristics and thermal barrier heights B can sufficiently be reproduced. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
