Paper Title:
Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes
  Abstract

The dependence of the reverse current of 3C-SiC p+-n diodes on the temperature and on the reverse bias is measured and a model based on thermally-assisted tunneling is proposed to explain the dominating mechanism responsible for the leakage current. Taking into account an additional ohmic shunt resistance, the experimental reverse characteristics and thermal barrier heights B can sufficiently be reproduced.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
571-574
DOI
10.4028/www.scientific.net/MSF.679-680.571
Citation
B. Zippelius, M. Krieger, H. B. Weber, G. Pensl, H. Nagasawa, T. Kawahara, N. Hatta , K. Yagi, H. Uchida, M. Kobayashi, "Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes", Materials Science Forum, Vols. 679-680, pp. 571-574, 2011
Online since
March 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Anatoly M. Strel'chuk, A.V. Mashichev, Alexander A. Lebedev, A.N. Volkova, Konstantinos Zekentes
Abstract:The forward current was investigated in 4H-SiC p+n structures grown by sublimation epitaxy. The doping level, Nd-Na, of the n-layer was...
1343
Authors: Eugen R. Neagu, C.J. Dias, M.C. Lança, Rui Igreja, José N. Marat-Mendes
Abstract:The isothermal charging current and the isothermal discharging current in low mobility materials are analyzed either in terms of polarization...
437
Authors: Jing Chen, Yong Shen Liu, Yan Yan Zhu
Chapter 3: Mechanical Dynamics and its Applications
Abstract:We have observed a hump structure in reverse current-voltage curve of n+/p shallow diode for both area and perimeter structures fabricated...
553
Authors: Itsara Srithanachai, Surada Ueamanapong, Poopol Rujanapich, Narin Atiwongsangthong, Surasak Niemcharoen, Amporn Poyai, Wisut Titiroongruang
Abstract:Diode leakage current consists of diffusion (Id) and generation current (Ig), which is strongly sensitive...
569
Authors: Tsuyoshi Ishikawa, T. Katsuno, Y. Watanabe, H. Fujiwara, T. Endo
Chapter 3: Physical Properties and Characterization of SiC
Abstract:We investigate the influence of SiC surface morphology on increase and variability in reverse leakage current of SiC Schottky barrier diodes...
371