Paper Title:
4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments
  Abstract

4H-SiC Schottky Barrier Diodes (SBDs) with remarkable electrical performance have been fabricated and characterised. A barrier height about 1.64V and an ideality factor close to 1 are extracted from the forward characteristics measured at several temperatures. These essential Schottky contact parameters are observed to be constant with temperature. A temperature probe with a simple and innovative scheme is designed and applied. The probe uses SiC SBDs as temperature sensor in the 20-4000C range, with measured sensitivities varying from 1.3 mV/K to 2.8 mV/K. The probe is meant to monitorize the temperature inside the furnaces, in the cement industry.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
575-578
DOI
10.4028/www.scientific.net/MSF.679-680.575
Citation
G. Brezeanu, F. Draghici, F. Craciunioiu, C. Boianceanu, F. Bernea, F. Udrea, D. Puscasu, I. Rusu, "4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments", Materials Science Forum, Vols. 679-680, pp. 575-578, 2011
Online since
March 2011
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Price
$32.00
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