Paper Title:
Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station
  Abstract

This paper reports long-term electrical results from two 6H-SiC junction field effect transistors (JFETs) presently being tested in Low Earth Orbit (LEO) space environment on the outside of the International Space Station (ISS). The JFETs have demonstrated excellent functionality and stability through 4600 hours of LEO space deployment. Observed changes in measured device characteristics tracked changes in measured temperature, consistent with well-known JFET temperature-dependent device physics.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
579-582
DOI
10.4028/www.scientific.net/MSF.679-680.579
Citation
P. G. Neudeck, N. F. Prokop, L. C. Greer III, L. Y. Chen, M. J. Krasowski, "Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station", Materials Science Forum, Vols. 679-680, pp. 579-582, 2011
Online since
March 2011
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Price
$32.00
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