Paper Title:
Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
  Abstract

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
59-62
DOI
10.4028/www.scientific.net/MSF.679-680.59
Citation
S. Leone, Y. C. Lin, F. C. Beyer, S. Andersson, H. Pedersen, O. Kordina, A. Henry, E. Janzén, "Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates", Materials Science Forum, Vols. 679-680, pp. 59-62, 2011
Online since
March 2011
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