Paper Title:
600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination
  Abstract

Numerous high-voltage applications require symmetrical bi-directional power flow control and protection circuitry. While mechanical contactors and circuit breakers provide bi-directional fault protection, they have slow actuation and suffer severe degradation during repeated fault isolation. The normally-on (N-ON) SiC vertical-channel Junction-Field-Effect-Transistor (VJFET) is an efficient solution for bi-directional circuit-breaker applications due to its low conduction/switching losses, +500°C operational capability, ON-state match of the no-fault operating mode of the system, efficient gate-drive operation under unipolar biasing, and majority carrier device scalability. Efficient 600-V/10-A symmetrical bi-directional power flow was demonstrated using 0.1-cm2 1200-V rated N-ON VJFETs with a gate driver applying 0-V and -34 V gate biases during the ON and OFF states, respectively. A self-aligned trenched guard-ring structure provides reliable edge termination.

  Info
Periodical
Materials Science Forum (Volumes 679-680)
Edited by
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
Pages
591-594
DOI
10.4028/www.scientific.net/MSF.679-680.591
Citation
V. Veliadis, D. Urciuoli, H.C. Ha, H. Hearne, C. Scozzie, "600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge Termination", Materials Science Forum, Vols. 679-680, pp. 591-594, 2011
Online since
March 2011
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Price
$32.00
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